This document is the data sheet of RAQ045P01, which introduces the structure, dimensions, application, packaging specifications, internal circuit, absolute maximum ratings, thermal resistance, electrical characteristics, etc. of the product.
The RAQ045P01 is a P‑channel MOSFET designed for low‑on‑resistance, small high‑power packages, and low‑voltage (1.5 V) drive operation. It is intended for switching applications in general‑use electronic equipment such as audio‑visual, office‑automation, and communication devices.
Key specifications include a drain‑source voltage of –12 V, gate‑source voltage range of 0 to –8 V, continuous drain current of 4.5 A, pulsed drain current of 18 A, and a power dissipation of 1.25 W. The device features built‑in body diodes, thermal resistance of 100 °C/W, and typical capacitance values for input, output, and reverse transfer.
| Drain‑source voltage (VDS) | -12 V |
|---|---|
| Gate‑source voltage (VGS) | 0 to -8 V |
| Continuous drain current (ID) | 4.5 A |
| Input capacitance (Ciss) | 4200 pF |
| Output capacitance (Coss) | 350 pF |
| Reverse transfer capacitance (Crss) | 330 pF |
The device is rated for a drain‑source voltage of –12 V.
The continuous drain current is specified as 4.5 A.
The basic ordering unit is 3000 pieces.
The storage temperature range is –55 °C to +150 °C.