RCD075N20 is a 10V drive N-channel MOSFET with low on-resistance, high-speed switching, and a wide range of SOA. It is suitable for switching applications and has the advantages of simple drive circuits and easy parallel use.
The RCD075N20 is a 10 V drive N‑channel MOSFET featuring low on‑resistance, high‑speed switching, and a wide safe operating area. It is suitable for simple drive circuits and can be paralleled easily.
The document provides detailed electrical characteristics, absolute maximum ratings, thermal resistance, package information, and measurement circuit diagrams for evaluating performance in applications such as switching power supplies and general‑purpose electronic equipment.
| Drain‑Source Voltage (VDS) | 200 V |
|---|---|
| Gate‑Source Voltage (VGS) | +30 V |
| Continuous Drain Current (ID) | 7.5 A |
| Power Dissipation (PD) | 20 W |
| Channel‑to‑Case Thermal Resistance (RθJC) | 6.25 °C/W |
| Input Capacitance (Ciss) | 755 pF |
| Output Capacitance (Coss) | 55 pF |
| Total Gate Charge (Qg) | 15 nC |
The maximum drain‑source voltage is 200 V.
It can handle a continuous drain current of 7.5 A.
The typical on‑state resistance is 0.250 mΩ at VGS = 10 V.
The channel‑to‑case thermal resistance is 6.25 °C/W.