RCX120N25 is a N-channel MOSFET from ROHM. It features low on-resistance, high switching speed, guaranteed gate-source voltage of ±30V, and is suitable for applications such as switch-mode power supplies and inverters.
The RCX120N25 is a 10 V drive N‑channel MOSFET featuring low on‑resistance, high‑speed switching, and a high‑power TO‑220FM package. It is intended for use in general‑purpose electronic equipment such as audio‑visual, office‑automation, and communication devices.
The sheet lists absolute maximum ratings, thermal resistance, detailed electrical characteristics, characteristic curves, and measurement circuit diagrams, enabling designers to evaluate performance and integrate the device safely.
| Drain‑source voltage (VDS) | 250 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 12 A |
| Pulsed drain current (ID(p)) | 48 A |
| Power dissipation | 40 W |
| Channel‑to‑case thermal resistance | 3.125 °C/W |
| Input capacitance (Ciss) | 1800 pF |
| Output capacitance (Coss) | 100 pF |
| Total gate charge (Qg) | 35 nC |
| Avalanche energy | 10.5 mJ |
The device can handle a continuous drain current of 12 A and a pulsed drain current of 48 A.
It is supplied in a high‑power TO‑220FM package.
The gate‑source voltage is rated up to +30 V.
The channel‑to‑case thermal resistance is 3.125 °C/W.