RMW130N03 is a high power, high speed switching, low on-resistance N-channel MOSFET from ROHM, and is used in switching power supplies.
The RMW130N03 is a silicon N‑channel MOSFET offered in a high‑power PSOP‑8 package. It features high‑speed switching, low on‑resistance, and a low‑voltage (4.5 V) gate drive, making it suitable for a variety of switching applications.
Typical applications include audio‑visual equipment, office‑automation devices, communication gear, and other general‑use electronic products. The datasheet provides absolute maximum ratings, electrical characteristics, thermal data, and example circuits for design reference.
| Drain‑source voltage (VDS) max | 30 V |
|---|---|
| Gate‑source voltage (VGS) max | +20 V |
| Continuous drain current (ID) max | 13 A |
| Power dissipation (PD) max | 3.0 W |
| Thermal resistance, junction‑to‑ambient (RθJA) | 41.7 °C/W |
| Storage temperature range | -55 °C to +150 °C |
The maximum drain‑source voltage is 30 V.
The device is specified for a low‑voltage drive of 4.5 V.
It is supplied in a PSOP‑8 (8‑lead) package.
Yes, it includes an ESD‑protection body diode.