RHP030N03 is a 4V driven Nch MOSFET with low on-resistance and low gate voltage threshold, suitable for switching circuits
The RHP030N03 is a silicon N‑channel MOSFET designed for low on‑resistance switching applications. It features a 4 V gate drive and typical on‑resistance of 90 mΩ.
The device is supplied in a tape‑and‑reel package (1000 pieces per reel) and rated for a maximum drain‑source voltage of 30 V, continuous drain current of 3 A, and a total power dissipation of 2.2 W. Detailed electrical characteristics, including capacitances and switching times, are provided for design reference.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 3 A |
| Pulsed drain current (ID,pulse) | 10 A |
| Total power dissipation (PD) | 2.2 W |
| Channel temperature limit | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Gate threshold voltage (VTH) | 1.0 V – 2.5 V |
The device can withstand up to 30 V between drain and source.
It is rated for a continuous drain current of 3 A.