The 2SA1008 is a PNP silicon epitaxial transistor developed by NEC Corporation for high-speed switching. It is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.
The NEC 2SA1008 is a silicon epitaxial PNP power transistor designed for high‑speed switching applications such as regulators and power amplifiers. The datasheet lists its key features, absolute maximum ratings, and typical electrical characteristics.
The document also includes ordering information, package drawing (TO‑220AB), derating curves, and safe operating area graphs, helping designers select appropriate operating conditions and understand thermal performance.
| Collector‑Base Voltage (Vcbo) | -100 V |
|---|---|
| Emitter‑Base Voltage (Vebo) | -7.0 V |
| Junction Temperature (Tj) | 150 °C |