The 2SA1010 is a PNP silicon epitaxial transistor for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high- frequency power amplifiers.
The NEC 2SA1010 is a PNP silicon epitaxial power transistor designed for high‑voltage, high‑speed switching. It is suitable for use as a driver in switching regulators, DC/DC converters, and high‑frequency power amplifiers.
Key specifications include a collector‑to‑emitter voltage of 100 V, a maximum DC collector current of 7 A, and a total power dissipation of 40 W at a 25 °C case temperature. The device features low saturation voltage, fast switching speed, and a wide storage temperature range, making it appropriate for a variety of high‑power applications.
| Total Power Dissipation (Tc=25 °C) | 40 W |
|---|---|
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55 °C to +150 °C |
The device can dissipate up to 40 W at a case temperature of 25 °C.
Pulse width should be less than 300 µs with a duty cycle under 10 %.