The 2SA1156 is a PNP silicon power transistor designed for low‑power switching regulator, DC‑DC converter and high‑voltage switch applications. It offers high breakdown voltage, low collector saturation voltage, and fast switching speed.
The datasheet lists absolute maximum ratings such as a collector‑to‑emitter voltage of –400 V, a collector current up to –10 A, and a total power dissipation of 1.0 W at 25 °C. Typical characteristics include current gain, turn‑on time, storage time, and various voltage‑current curves across temperature ranges.
| Collector‑to‑Emitter Voltage (VCEO) | -400 V |
|---|---|
| Collector Current (Ic) | -10 A |
| Storage Temperature Range | -55 to +150 °C |
The maximum collector‑to‑emitter voltage is –400 V.
The transistor can handle up to –10 A of collector current.