The NEC 2SA1142 is a PNP silicon power transistor designed for audio‑frequency power amplifiers. It offers high voltage capability and low collector‑emitter saturation voltage.
Key specifications include a maximum collector‑emitter voltage of -180 V, a DC current gain (hFE) of 50‑100, a cutoff frequency of 180 MHz, and a total power dissipation of 1.2 W at 25 °C. The device can operate up to a junction temperature of 150 °C and a storage temperature range of –55 °C to +150 °C.
| Collector‑Emitter Voltage (VCE) | -180 V |
|---|---|
| Emitter‑Base Voltage (VEB) | -5.0 V |
| Collector Current (IC) | -100 mA |
| DC Current Gain (hFE) | 50‑100 |
| Cutoff Frequency (fT) | 180 MHz |
| Maximum Junction Temperature | 150 °C |
The maximum collector‑emitter voltage is -180 V.
The DC current gain ranges from 50 to 100.