The 2SA1226 is a high‑frequency PNP silicon epitaxial transistor offered in a mini‑mold package. Its key features include a high gain‑bandwidth product of 400 MHz, low output capacitance of 1.1 pF, and low noise figure of 3.5 dB.
The document lists absolute maximum ratings such as -40 V for collector‑to‑base and collector‑to‑emitter voltages, a maximum collector current of about 30 mA, and a total power dissipation of 200 mW at 25 °C. Electrical characteristics tables give typical values for DC current gain, saturation voltage, and capacitances, while typical characteristic curves illustrate performance over temperature and bias conditions.
| Maximum Collector Current (Ic) | 30 mA |
|---|---|
| Output Capacitance (Cgp) | 1.1 pF |
| Noise Figure (NF) | 3.5 dB |
| Collector Saturation Voltage (VCE(sat)) | 0.09‑0.3 V |
| Base to Emitter Voltage (VBE) | 0.67‑0.72 V |
The maximum DC collector current is about 30 mA.
The typical output capacitance is 1.1 pF.