This document describes the features and characteristics of the 2SA1069,1069A PNP silicon power transistors for high-speed switching applications, suitable for switching regulators, DC/DC converters, high-frequency power amplifiers, etc.
The 2SA1069 and 2SA1069A are high‑speed switching PNP silicon power transistors designed for use in switching regulators, DC‑DC converters, and high‑frequency power amplifiers. The datasheet lists absolute maximum ratings, typical electrical parameters, and thermal limits.
Key specifications include a collector‑base voltage of -80 V, collector‑emitter voltage of -80 V, maximum collector current of 5 A (continuous) and 10 A (pulse), turn‑on time of about 0.5 µs, and a power dissipation of 30 W at 25 °C. The device is supplied in a TO‑220AB (MP‑25) package. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | -80 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | -80 V |
| Emitter‑Base Voltage (Vebo) | -12 V |
| Collector Current (DC) | -5.0 A |
| Collector Current (Pulse) | -10 A |
| Maximum Power Dissipation (Pd) | 30 W |
| Junction Temperature (Tj) Max | 150 °C |
| Package Type | TO‑220AB (MP‑25) |
The maximum collector‑base voltage is -80 V.
The device can dissipate up to 30 W at a case temperature of 25 °C.
It is supplied in a TO‑220AB (MP‑25) package.