The NEC 2SA1153 is a PNP silicon transistor intended for speed switching applications. It offers high frequency current gain, low collector saturation voltage, and a small output capacitance, making it suitable for general‑purpose amplifiers and high‑speed switching circuits.
Key electrical characteristics include a maximum power dissipation of 600 mW, collector‑emitter voltage of –40 V, collector‑base voltage of –60 V, and fast switching times (turn‑on 35 ns, turn‑off 255 ns). The device is supplied in a TO‑92 style package with dimensions of about 0.208 in (0.165 mm) and operates over a temperature range from –55 °C to +150 °C.
| Maximum Power Dissipation | 600 mW |
|---|---|
| Collector‑Emitter Voltage (VCE) | -40 V |
| Collector‑Base Voltage (VCB) | -60 V |
| Output Capacitance | 5.0 – 80 pF |
| Turn‑on Time | 35 ns |
| Turn‑off Time | 255 ns |
| Operating Temperature Range | -55 °C to +150 °C |
The maximum collector‑emitter voltage is –40 V.
The turn‑on time is 35 ns.
The device can dissipate up to 600 mW.