This document describes the features and characteristics of 2SA1221 and 2SA1222 PNP silicon epitaxial transistors, which are suitable for low-frequency power amplifiers such as TV vertical deflection output, audio output, and variable power supplies.
This data sheet provides the electrical specifications, absolute maximum ratings, and typical performance curves for NEC's 2SA1221 and 2SA1222 PNP silicon epitaxial transistors. It includes parameters such as collector‑emitter voltage, collector current limits, power dissipation, and gain bandwidth.
The document also contains classification information, marking details, and notes on quality grades and recommended application areas for these semiconductor devices.
| Collector to base voltage (VCBO) | 160 V |
|---|---|
| Maximum pulse collector current | 1.0 A |
| Total power dissipation | 1.0 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 to +150 °C |
The device can dissipate up to 1.0 W of power.