The 2SA1129 is a mold power transistor developed for mid-speed switching, and is ideal for use as a ramp driver. It has a large current capacity with a small package.
The 2SA1129 is a PNP silicon epitaxial power transistor designed for low‑frequency power amplifiers and mid‑speed switching, ideal as a ramp driver. It offers a large current capacity in a compact TO‑220AB package.
Key specifications include a continuous collector current of -7.0 A, a collector‑to‑emitter voltage rating of -30 V, and a typical collector saturation voltage of -0.3 V at -3.0 A. The device is supplied in a TO‑220AB package and is complemented by the 25C2654 transistor.
| Continuous collector current (Ic(oc)) | -7.0 A |
|---|---|
| Complementary transistor | 25C2654 |
| Collector‑to‑base voltage (Vcbo) | -30 V |
| Collector‑to‑emitter voltage (Vceo) | -30 V |
| Emitter‑to‑base voltage (Vebo) | -7.0 V |
| Maximum junction temperature (Tj) | 150 °C |
The datasheet specifies a continuous collector current of -7.0 A.