NEC 2SK1285 N-Channel Power MOSFET Datasheet


NEC 2SK1285 N-Channel Power MOSFET Datasheet - cover page
Brand
NEC
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
377 KB
Published
01 June, 2012
Updated
27 June, 2012
MD5 checksum
6046116CF01F04FBB122AF4CB2195926

About this manual

The 2SK1285 is an N‑channel MOSFET designed for solenoid, motor and lamp driver applications. It features low on‑state resistance, built‑in gate protection diodes, and a standard quality grade suitable for industrial use.

Key specifications include a maximum drain‑to‑source voltage of 100 V, continuous drain current of 3 A, total power dissipation of 20 W at 25 °C case temperature, and typical on‑state resistance of 0.32 Ω at VGS = 10 V. Electrical characteristics such as capacitances, gate charge, and switching times are also detailed.

What's inside

  • Description
  • Features
  • Quality Grade
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Typical Characteristics
  • Capacitance
  • Switching Characteristics
  • Reference

Specifications

Maximum Drain‑to‑Source Voltage (VDS)100 V
Continuous Drain Current (ID)3.0 A
Total Power Dissipation (Tc=25 °C)20 W
Input Capacitance (Ciss)500 pF
Output Capacitance (Coss)160 pF
Reverse Transfer Capacitance (Crss)20 pF

Frequently asked questions

What is the maximum drain‑to‑source voltage for the 2SK1285?

The device can withstand a drain‑to‑source voltage of up to 100 V.

What is the continuous drain current rating?

The MOSFET is rated for a continuous drain current of 3.0 A.

What is the input capacitance of the device?

The input capacitance (Ciss) is specified as 500 pF.

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