EMF9 Transistors Rev.A 1/5 is a power management product with dual transistors 2SC5585 and 2SK3019 housed independently in an EMT6 package. It features a power switching circuit in a single package, reducing mounting cost and area. The structure is a silicon epitaxial planar transistor.
The EMF9 series comprises dual power‑management transistors (2SC5585 and 2SK3019) packaged in an EMT6 case, offering a compact solution for switching circuits. The document lists application features, package dimensions, and marking codes for the EMF9 devices.
Detailed sections cover absolute maximum ratings, electrical characteristics such as collector‑emitter voltage, current gain, transition frequency, and switching behavior, as well as typical characteristic curves. Legal and usage notes are provided at the end of the handbook.
| Package dimensions (mm) | 0.22 × 1.2 × 1.6 |
|---|---|
| Transition frequency (fT) | ≈ 320 MHz |
| Current gain (hFE) | 270 – 680 |
| Gate‑threshold voltage (VGS(th)) | 0.8 – 1.5 V |
| On‑state resistance (RDS(on)) | ≈ 58 Ω |
| Collector‑emitter breakdown voltage (BVCEO) | 12 V |
The collector‑emitter breakdown voltage (BVCEO) is specified as 12 V.
The EMF9 transistors are housed in an EMT6 package measuring 0.22 mm × 1.2 mm × 1.6 mm.
The datasheet lists a current gain (hFE) range of 270 to 680.
The gate‑threshold voltage (VGS(th)) is between 0.8 V and 1.5 V.