QS8M51 is a 4V drive Nch + Pch MOSFET with low on-resistance and small surface mount package. It is suitable for switching applications.
The QS8M51 is a dual MOSFET offering both N‑channel and P‑channel devices in a compact surface‑mount package. It is designed for low on‑resistance and low‑voltage (4 V) drive applications.
Key specifications include a 100 V drain‑source breakdown voltage, ±20 V gate‑source rating, up to 2 A continuous drain current, and 15 W total power dissipation. The part is supplied in a TSMT‑8 package and is intended for switching applications in various electronic equipment.
| Drain‑source voltage (VDS) | 100 V |
|---|---|
| Gate‑source voltage (VGS) | ±20 V |
| Continuous drain current (ID) | 2 A |
| Pulsed drain current (ID(p)) | 6 A |
| Power dissipation (PD) | 15 W |
| Channel temperature (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| On‑state resistance (RDS(on)) – N‑channel typical | 0.35 mΩ |
| On‑state resistance (RDS(on)) – P‑channel typical | 0.38 mΩ |
The QS8M51 can withstand up to 100 V drain‑source voltage.
The device is designed for a low 4 V drive voltage.
It is supplied in a small surface‑mount TSMT‑8 package.
The gate‑source voltage rating is ±20 V.