This data sheet introduces the characteristics of the QS6K21 product, including package, external dimensions, maximum working voltage, maximum current, and maximum power
The QS6K21 is a 2.5 V drive N‑channel MOSFET with low on‑state resistance and fast switching. Key features include low voltage drive capability and integrated ESD protection.
The document lists absolute maximum ratings, electrical characteristics, packaging details, and typical application circuits. It also contains measurement circuit diagrams and a notice about usage restrictions and safety considerations.
| Drain‑source voltage (VDS) max | 45 V |
|---|---|
| Gate‑source voltage (VGS) max | 12 V |
| Continuous drain current (ID) max | 1.0 A |
| Pulsed drain current (ID) max | 42.0 A |
| Total power dissipation (PD) max | 125 W |
| Channel temperature max | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The maximum drain‑source voltage is 45 V.
It operates with a low voltage drive of 2.5 V.
The basic ordering unit is 3000 pieces.