QS8J5 is a Pch + Pch MOSFET produced by ROHM. It has low on-resistance, high power package, low voltage drive, and is suitable for switching applications.
The QS8J5 is a silicon P‑channel MOSFET with a low on‑resistance, high‑power TSMT8 package, and a 4 V drive requirement. It is intended for switching applications and includes typical application circuits and measurement setups.
The document lists absolute maximum ratings, thermal resistance, and detailed electrical characteristics such as drain‑source voltage, gate‑source voltage, continuous and pulsed drain currents, and power dissipation. Packaging dimensions and ordering information are also provided.
| Drain‑source voltage (Vds) max | -30 V |
|---|---|
| Gate‑source voltage (Vgs) max | +20 V |
| Continuous drain current (Id) max | +5 A |
| Pulsed drain current (Id) max | +20 A |
| Power dissipation (Pd) total | 1.5 W |
| Channel to ambient thermal resistance (Rth) | 83.3 °C/W |
The QS8J5 can tolerate a drain‑source voltage up to -30 V.
The device is rated for a continuous drain current of +5 A.
The maximum gate‑source voltage is +20 V.
The total power dissipation is rated at 1.5 W.