QS8J11 is a Pch + Pch MOSFET produced by ROHM. Its features are low on-resistance, small high power package and low voltage drive (1.5V drive).
The Qs8J11 is a 1.5 V drive P‑channel MOSFET featuring low on‑resistance, a small high‑power package and low‑voltage operation. The datasheet provides absolute maximum ratings, electrical characteristics, thermal data and typical application circuits.
Key sections include absolute maximum ratings, electrical characteristics, thermal resistance, packaging specifications, application examples, measurement circuits and legal notices. The document is intended for designers integrating the device into general‑use electronic equipment.
| Drain‑source voltage (VDS) | 12 V |
|---|---|
| Gate‑source voltage (VGS) | -8 V |
| Continuous drain current (ID) | 3.5 A |
| Channel temperature (TCH) | 150 °C |
The device can withstand up to 12 V drain‑source voltage.
A low gate‑drive voltage of 1.5 V is specified.
The MOSFET is supplied in a tape‑and‑reel package, 3 mm wide.