QS8M12 is a low voltage drive Nch+Pch MOSFET with low on-resistance, high power and low voltage drive. It is mainly used for switching power supplies.
The QS8M12 is a dual N‑channel/P‑channel MOSFET designed for low‑voltage (4 V) drive applications and packaged in a high‑power TSMT8 case. It offers low on‑resistance and is suitable for switching and inner‑circuit use.
The sheet lists key specifications such as a 30 V drain‑source rating, ±20 V gate‑source rating, 4 A continuous drain current, 12 A pulsed current, and 15 W total power dissipation, together with typical characteristic curves and recommended measurement circuits.
| Power dissipation (PD) | 15 W total |
|---|---|
| On‑state resistance (RDS(on)) typical | 40 mΩ (N‑channel) / 55 mΩ (P‑channel) |
It is designed for a low‑voltage 4 V drive.
The MOSFET is supplied in a high‑power TSMT8 package.