This document is a datasheet for the ROHM QS8M13 4V Drive Nch + Pch MOSFET. The MOSFET features low on-resistance, high power package, and low voltage drive, making it suitable for switching applications.
The QS8M13 MOSFET family from ROHM provides both N‑channel and P‑channel devices in a compact TSMT8 package. It is designed for low‑voltage (4 V) drive applications, offering low on‑resistance and high current capability.
Typical specifications include a 30 V drain‑source rating, ±20 V gate‑source rating, 6 A continuous drain current, 18 A pulsed drain current, and a total power dissipation of 15 W. The device is supplied on a ceramic board and includes an integrated body diode for protection.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 6 A |
| Pulsed drain current (ID,pulse) | 18 A |
| Power dissipation (PD) | 15 W total |
| Maximum channel temperature (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The QS8M13 can withstand up to 30 V drain‑source voltage.
It is rated for a continuous drain current of 6 A.
The total power dissipation rating is 15 W.
The channel temperature limit is 150 °C.