QS6M3 is a Nch+Pch MOSFET produced by Toshiba. Its features are low on-resistance, built-in G-S protection diode, and TSMT6 package. This product is suitable for applications such as power switching and DC/DC converters.
The QS6M3 is a dual N‑channel and P‑channel MOSFET featuring low on‑resistance, a built‑in gate‑source protection diode, and a compact TSMT6 surface‑mount package. It is intended for power‑switching applications such as DC‑DC converters.
The document lists absolute maximum ratings, detailed electrical characteristics, characteristic curves, and measurement circuit diagrams. It also includes usage notes, packaging details, and legal disclaimer information for designers.
| Maximum power dissipation (TOTAL) | 6.0 W |
|---|---|
| Thermal resistance (Rth ch‑a) | 139 °C/W |
Yes, it has a built‑in gate‑source protection diode.
It is supplied in a small surface‑mount package (TSMT6).