QS8K13 is a low-voltage drive Nch + Nch MOSFET produced by ROHM, with low on-resistance, high power package, low voltage drive and other features, suitable for switching applications.
The QS8K13 is a low‑on‑resistance, 4 V‑drive N‑channel MOSFET offered in a high‑power TSMT8 package. It features low voltage drive capability, a continuous drain current of 16 A, and a typical on‑state resistance suitable for switching applications.
The datasheet includes detailed electrical characteristics, absolute maximum ratings, packaging information, and example measurement circuits. It also contains application notes, thermal resistance curves, and safety notices for designers using the device in electronic equipment.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 16 A |
| Pulsed drain current (ID,pulse) | 18 A |
| Power dissipation (PD) | 2.15 W |
| Channel temperature (TCH) | 150 °C |
The QS8K13 is rated for a maximum drain‑source voltage of 30 V.
It can conduct a continuous drain current of 16 A.
The typical gate threshold voltage is 1.0 V.
The device is supplied in a TSMT8 (8‑lead) package.