QS6K1 Nch+Nch MOS FET Datasheet
The QS6K1 is a low‑on‑resistance N‑channel MOSFET with a built‑in gate‑source protection diode, offered in a compact TSMT6 surface‑mount package. It is intended for power‑switching applications such as DC‑DC converters.
Key specifications include a 30 V drain‑source rating, 12 V gate‑source rating, continuous drain current of 1 A, pulsed drain current of 4 A, and a total power dissipation of about 2.1 W. Detailed electrical characteristics and typical performance curves are provided for design reference.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Continuous drain current (ID) | 1.0 A |
| Pulsed drain current (ID,pulse) | 4.0 A |
The QS6K1 can withstand up to 30 V drain‑source voltage.
It is rated for a continuous drain current of 1.0 A.
The device is supplied in a small surface‑mount TSMT6 package.