QS6M4 is a dual MOSFET, which features low switching loss, low driving voltage, and is suitable for load switches and inverters.
The QS6M4 combines a P‑channel and an N‑channel MOSFET in a single TSMT6 package, offering low on‑state resistance and fast switching. It operates with a low drive voltage of 2.5 V, making it suitable for load‑switch and inverter applications.
Key specifications include a maximum drain‑source voltage of 30 V (N‑channel) and –20 V (P‑channel), drain currents up to ±12 A (N) and ±1.5 A (P), and typical on‑resistance values of 260 mΩ (N) and 430 mΩ (P). The device is supplied in a TSMT6 surface‑mount package. This manual is written in Chinese.
| Drive Voltage | 2.5 V |
|---|---|
| Package | TSMT6 |
The device operates with a low drive voltage of 2.5 V.
It is supplied in a surface‑mount TSMT6 package.