QS8J4 is a P-channel MOSFET with low on-resistance, high power package and low voltage drive. It is suitable for switching applications.
The QS8J4 is a P‑channel MOSFET offered in a TSMT8 package. It features low on‑resistance, a high‑power package, and a low‑voltage drive capability (4 V). The datasheet lists absolute maximum ratings, electrical parameters, and thermal characteristics for design use.
Typical application circuits, characteristic curves, and measurement setups are included to aid designers in implementing the device in audio‑visual, office‑automation, communication, and other electronic equipment. The document also contains legal notices and contact information for further product details.
| Drain‑source voltage (Vdss) | -30 V |
|---|---|
| Gate‑source voltage (Vgss) | 420 V |
| Continuous drain current (Id) | 4 A |
| Pulsed drain current (Id,pulse) | 16 A |
| Power dissipation (Pd) | 15 W total |
| Maximum channel temperature (Tj) | 150 °C |
| Thermal resistance, total (RθJA) | 83.3 °C/W |
| On‑state resistance (Rds(on), typical) | 55 mΩ |
| Input capacitance (Ciss, typical) | 800 pF |
| Output capacitance (Coss, typical) | 120 pF |
The QS8J4 can tolerate a drain‑source voltage of up to –30 V.
It is rated for a continuous drain current of 4 A.
The typical on‑state resistance is about 55 mΩ.
The device is designed for a low‑voltage drive of 4 V.