2SB0939, 2SB0939A are silicon PNP epitaxial planar type Darlington transistors with high forward current transfer ratio hFE and high-speed switching. The transistor has N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
The document provides the specifications for the Panasonic 2SB0939 and 2SB0939A power transistors, which are silicon PNP epitaxial planar Darlington devices intended for medium‑speed power switching. It lists absolute maximum ratings, electrical characteristics, and thermal limits, including collector‑emitter voltage, peak collector current, and transition frequency.
Additional information covers recommended usage conditions, export restrictions, and precautionary notes for special applications such as aerospace or safety‑critical equipment. Users are advised to verify the latest product specifications before final design and to observe the specified operating limits to ensure reliability.
| Maximum Collector Voltage (VCE) | -60 V |
|---|---|
| Maximum Emitter Voltage (VEO) | -80 V |
| Peak Collector Current (IC peak) | 12 A |
| Junction Temperature (Tj max) | 150 °C |
| Storage Temperature Range | -55 to +150 °C |
The device is rated for a peak collector current of 12 A.
Yes, an export permit from the Japanese government is required for any controlled products or technologies described in the material.