2SAR514R is a medium-power PNP transistor produced by ROHM. Its features are low saturation voltage and high switching speed.
This datasheet provides the specifications and characteristics of the ROHM 2SAR514R medium‑power PNP transistor. It lists features, dimensions, absolute maximum ratings and packaging details.
The document also contains detailed electrical characteristics, characteristic curves, a switching‑time test circuit and safety notices for proper use in electronic equipment.
| Collector‑emitter voltage (VCEO) | -80 V |
|---|---|
| Collector‑base voltage (VCBO) | -80 V |
| Emitter‑base voltage (VEBO) | -6 V |
| Pulsed collector current (ICP) | -1.4 A |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range (Tstg) | -55 to 150 °C |
| Saturation voltage (VCE(sat), typical) | -0.4 V |
| DC current gain (hFE) | 120 – 390 |
The maximum collector‑emitter voltage is -80 V.
The typical saturation voltage is -0.4 V.
The storage temperature range is -55 °C to 150 °C.