2SA1834 is a low VCE(sat) power transistor produced by Toshiba. It has low saturation voltage, high current capacity, high hFE, etc.
The 2SA1834 is a low saturation voltage transistor designed for strobe flash applications, offering a typical VCE(sat) of about 0.16 V at 4 A collector current and a high current capability of up to 10 A. The document lists absolute maximum ratings such as 20 V collector‑emitter voltage, 1 W power dissipation at 25 °C, and a junction temperature limit of 150 °C.
Additional sections cover packaging specifications, detailed electrical characteristics, safe operating area graphs, and legal notices. The datasheet also includes application circuit examples and advises users to verify specifications with ROHM sales representatives for high‑reliability designs.
| Collector-Emitter Voltage (VCEO) | -20 V |
|---|---|
| Collector Current (Ic) | 10 A |
| Base Current (Ib) | -2 A |
| Power Dissipation (Pd) | 1 W |
| Junction Temperature (Tj) | 150 °C |
| Transition Frequency (fT) | 150 MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.16 V (typ) |
| Storage Temperature Range | -55 °C to +150 °C |
The transistor is rated for a collector current of 10 A.
Typically about 0.16 V at a collector current of 4 A and base current of 50 mA.
The device can withstand up to 20 V between collector and emitter.
Approximately 150 MHz.