This document introduces a general purpose transistor from ROHM, model 2SA1774EB. It is primarily used for general purpose small signal amplifiers and features excellent hFE linearity. It complements the 2SC4617EB. The transistor is a PNP silicon epitaxial planar structure with a rated collector-base voltage of 50V and a rated collector current of 0.15A.
The ROHM 2SA1774EB is a general‑purpose PNP silicon epitaxial transistor rated for 50 V VCE and 0.15 A IC. The datasheet lists absolute maximum ratings, electrical characteristics, and typical application circuits.
Key sections include dimensions, features, absolute maximum ratings, detailed electrical parameters, characteristic curves, and legal notices. The document is intended for designers of audio‑visual, office‑automation, communication and other electronic equipment.
| Collector‑base voltage (Vcbo) | 60 V |
|---|---|
| Collector‑emitter voltage (Vceo) | 50 V |
| Emitter‑base voltage (Vebo) | -6 V |
| Power dissipation (Pp) | 150 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range (Tstg) | -55 °C to +150 °C |
| DC current gain (hFE) | 120 to 390 |
| Transition frequency (fT) | 140 MHz |
| Output capacitance (Cob) | 4.0‑5.0 pF |
The maximum collector‑emitter voltage is 50 V.
The device can dissipate up to 150 mW.
It can be stored from –55 °C to +150 °C.