AO4918 is a dual N-channel enhancement mode field effect transistor from AOS. It features a low RDS(ON) and a low gate charge. The transistor can be used in DC-DC converters with a Schottky diode packaged in parallel with the synchronous MOSFET to further increase efficiency.
The AO4918 is an asymmetric dual N‑channel enhancement mode field‑effect transistor that integrates two MOSFETs and a Schottky diode in a compact package. It is designed for use in DC‑DC converters, offering low on‑resistance and high efficiency.
The document lists absolute maximum ratings, detailed electrical characteristics, thermal performance data, and typical switching parameters. It also includes safety notices that the product is not authorized for life‑support applications and confirms RoHS compliance.
| Drain‑Source Voltage (VDS) Max | 30 V |
|---|---|
| Continuous Drain Current (ID) @ VGS=10V | 9.3 A |
| On‑Resistance (RDS(ON)) @ VGS=10V | < 14.5 mΩ |
| Schottky Diode Forward Voltage | < 0.5 V @ 1 A |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
| Maximum Junction‑to‑Lead Capacitance (Csteady‑State) | 30.5 |
The AO4918 can withstand up to 30 V drain‑source voltage.
It can conduct a continuous drain current of 9.3 A at VGS = 10 V.
Yes, the AO4918 is Pb‑free and meets RoHS specifications.
The on‑resistance is less than 14.5 mΩ at VGS = 10 V.