The AO4916 is a dual N-channel enhancement mode MOSFET from ON Semiconductor with a maximum channel voltage of 30V and a maximum drain current of 8.5A. The device uses advanced trench technology to provide excellent R DS(ON) and low gate charge, and is suitable for use in DC-DC converters.
The AO4916 and AO4916L are dual N‑channel enhancement‑mode MOSFETs that incorporate a Schottky diode in the same SO‑8 package. They are intended for use in DC‑DC converters where low on‑resistance and fast switching are required.
The document provides detailed electrical characteristics (drain‑source voltage, gate‑source voltage, continuous drain current, etc.), thermal ratings, typical performance curves, package marking, land‑pattern dimensions, and tape‑and‑reel handling information.
| Drain‑Source Voltage (Vds) | 30 V |
|---|---|
| Gate‑Source Voltage (Vgs) | +20 V |
| On‑Resistance (Rds(on)) | < 17 mΩ (Vgs = 10 V) |
The device is rated for a maximum drain‑source voltage of 30 V.
Both parts are supplied in an SO‑8 surface‑mount package.
Yes, the AO4916L is the green (lead‑free) version of the product.