AO4914 is a dual N-channel enhancement mode field effect transistor with Schottky diode packaged together, used in DC-DC converters.
The AO4914 is a dual N‑channel enhancement‑mode MOSFET that incorporates a co‑packaged Schottky diode to improve efficiency in DC‑DC converters. The device features low on‑resistance, high current capability, and a compact trench‑technology design suitable for synchronous rectifier applications.
The datasheet lists absolute maximum ratings, typical electrical and thermal characteristics, and includes detailed graphs of on‑resistance, gate charge, and capacitance. It also contains safety notices that the product is intended for consumer markets only and must not be used in life‑support systems.
| Continuous Drain Current (Id) | 8.5 A |
|---|---|
| On‑Resistance (Rds(on)) | <18 mΩ (typical) |
| Input Capacitance (Ciss) | 971 pF (typical) |
| Total Gate Charge Qg(10V) | 19.2 nC (typical) |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C/W (typical) |
The AO4914 can handle a continuous drain current of 8.5 A.
Thermal resistance is given as junction‑to‑ambient (RθJA) of 62.5 °C/W for each chip, measured with the device mounted on a FR‑4 board in still air at 25 °C.
Yes, the product is intended for consumer markets only and must not be used in life‑support devices or systems.