AO4433 is a P-channel enhancement mode field effect transistor from Alpha & Omega Semiconductor, Ltd., with excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.
The AO4433 P‑Channel enhancement mode FET uses advanced trench technology to provide low gate charge and a -30 V drain‑source rating. It is suitable for load‑switch and PWM applications and is RoHS‑compliant (Pb‑free). The device is also ESD protected and offered in a green‑product option (A04433L).
Key electrical specifications include a continuous drain current of -11 A, pulsed drain current up to -50 A, an ESD rating of 1.5 kV HBM, and typical on‑resistance below 14 mΩ at Vgs = -20 V. Thermal characteristics show a maximum junction‑to‑ambient temperature of 150 °C and a power dissipation of 2.1 W at 70 °C ambient.
| Drain‑Source Voltage (Vds) | -30 V |
|---|---|
| Gate‑Source Voltage (Vgs) | +25 V |
| Continuous Drain Current (Id) | -11 A |
| Pulsed Drain Current (Id,pulse) | -50 A |
| ESD Rating | 1.5 kV HBM |
| Input Capacitance (Ciss) | 1760 pF |
| Total Gate Charge (Qg) | 30 nC |
| On‑Resistance (Rds(on)) | < 14 mΩ |
The AO4433 can tolerate a maximum drain‑source voltage of -30 V.
The device is rated for 1.5 kV HBM ESD protection.
The typical input capacitance (Ciss) is 1760 pF.
Yes, the standard AO4433 part is Pb‑free and meets RoHS specifications.