The AO4606 is a complementary enhancement mode field effect transistor produced by Alpha&Omega Semiconductor,Ltd. It has excellent RDS(ON) and low gate charge, and can be used for a variety of applications, such as high side switches.
The AO4606 is a complementary enhancement‑mode field‑effect transistor that uses advanced trench‑technology MOSFETs. It can be used as a level‑shifted high‑side switch and in many other applications. The device is offered in both n‑channel and p‑channel versions with matching voltage and current ratings.
The datasheet lists absolute maximum ratings, typical electrical and thermal characteristics, and package information for the SO‑8 package, including tape‑and‑reel handling data. Key parameters such as drain‑source voltage, gate‑source voltage, continuous drain current, on‑resistance, and capacitances are provided for design reference.
| Drain‑Source Voltage (Vds) | 30 V (n‑channel), -30 V (p‑channel) |
|---|---|
| Gate‑Source Voltage (Vgs) | ±20 V |
| On‑Resistance (Rds(on)) at Vgs=10 V | < 28 mΩ (n‑channel), < 35 mΩ (p‑channel) |
| Input Capacitance (Ciss) | 680 pF (n‑channel), 920 pF (p‑channel) |
| Package Type | SO‑8 |
The AO4606 can tolerate up to 30 V on the n‑channel side and –30 V on the p‑channel side.
The n‑channel MOSFET has an on‑resistance of less than 28 mΩ, and the p‑channel version has less than 35 mΩ at Vgs = 10 V.
The n‑channel device has an input capacitance of 680 pF, and the p‑channel device has 920 pF.