AO4709 is a P-channel enhancement mode field effect transistor with Schottky diode from Nexperia. It features excellent R DS(ON) and low gate charge.
The AO4709 is a P‑Channel enhancement mode MOSFET that incorporates a Schottky diode, designed for use in non‑synchronous DC‑DC converters. It features trench technology for low on‑resistance and low gate charge, and is offered as a Pb‑free, RoHS‑compliant part.
The document provides absolute maximum ratings, detailed static and dynamic electrical characteristics, switching parameters, and typical electrical and thermal curves for both the MOSFET and the integrated Schottky diode.
| Drain‑Source Voltage (Vds) | -30 V |
|---|---|
| Gate‑Source Voltage (Vgs) | +20 V |
| Continuous Drain Current (Id) @ 70 °C | -6.6 A |
| Schottky Forward Voltage Drop (Vf) @ 1 A | 0.45 V |
| Power Dissipation (Pd) @ 70 °C | 2.2 W |
The device is rated for a maximum drain‑source voltage of -30 V.
It can conduct a continuous drain current of -6.6 A at a case temperature of 70 °C.
The Schottky diode has a typical forward voltage of 0.45 V at 1 A.
Yes, the AO4709 is Pb‑free and meets RoHS specifications.