AO4824 is a N-channel field effect transistor with a maximum channel voltage of 30V and a maximum continuous current of 8.5A. It has a low RDS(ON) and low gate charge, making it ideal for use in DC-DC converters.
The AO4824 is an asymmetric dual N‑channel enhancement mode FET that uses advanced trench technology to achieve low on‑resistance and low gate charge, making it suitable for compact DC‑DC converter designs. The device is offered in a standard Pb‑free, RoHS‑compliant package (SOIC‑8) with an optional green‑product variant AO4824L that is electrically identical.
Key specifications include a maximum drain‑source voltage of 30 V, continuous drain current of 8.5 A at 25 °C, and a total gate charge of about 30 nC. Thermal characteristics such as a junction‑to‑ambient resistance of 48 °C/W and detailed capacitance parameters are also provided to aid designers in thermal management and switching performance calculations.
| Drain‑Source Voltage (VDS) max | 30 V |
|---|---|
| Gate‑Source Voltage (VGS) max | +20 V |
| Continuous Drain Current (ID) at 25 °C | 8.5 A |
| Pulsed Drain Current | 30 A |
| Power Dissipation | 1.28 W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) typ | 48 °C/W |
| Input Capacitance (Ciss) | 3656 pF |
| Total Gate Charge (Qg) | 30.5 nC |
The AO4824 can withstand a maximum drain‑source voltage of 30 V.
The device is rated for a continuous drain current of 8.5 A at 25 °C.
The typical total gate charge is about 30.5 nC.