AO4704 is an N-Channel enhancement mode field effect transistor with Schottky diode characteristics. It uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky diode boosts efficiency further.
The AO4704 is an N‑channel enhancement mode field‑effect transistor that incorporates a co‑packaged Schottky diode, making it suitable for synchronous switching in PWM applications. The device is Pb‑free and offered in a green product option (AO4704L) that is electrically identical.
Key specifications include a 30 V drain‑source rating, 13 A continuous drain current, and low on‑resistance (<11.5 mΩ at VGS = 10 V). Thermal data show a maximum power dissipation of 3.1 W and a junction‑to‑ambient thermal resistance of 40 °C/W. Detailed capacitance and gate‑charge characteristics are also provided for design reference.
| On‑Resistance (RDS(ON)) at VGS=10 V | < 11.5 mΩ |
|---|
The on‑resistance is less than 11.5 mΩ when VGS is 10 V.