The document describes the features and characteristics of the AO4604 model, including the use of advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The product can be used in power inverters and other applications.
The AO4604 is a complementary enhancement‑mode MOSFET using advanced trench technology. It is offered in both n‑channel and p‑channel versions and is suitable for power inverters and similar applications.
The document lists absolute maximum ratings, thermal characteristics, typical on‑resistance, gate charge, and detailed SO‑8 package dimensions, as well as tape‑and‑reel handling data for production.
| Drain‑Source Voltage (Vds) | 30 V (n‑channel), -30 V (p‑channel) |
|---|---|
| Gate‑Source Voltage (Vgs) | ±20 V |
| Continuous Drain Current (Id) | 6.9 A (n‑channel), 5 A (p‑channel) |
| On‑Resistance (Rds(on)) | < 28 mΩ @ Vgs=10 V (n‑channel), < 52 mΩ @ Vgs=10 V (p‑channel) |
| Total Gate Charge (Qg) at 10 V | 13.84 nC |
The AO4604 can withstand up to 30 V on the n‑channel side and –30 V on the p‑channel side.
The total gate charge at 10 V is specified as 13.84 nC.
The device is supplied in an SO‑8 surface‑mount package.
The n‑channel AO4604 is rated for a continuous drain current of 6.9 A at 25 °C.