AO4805 is a dual P-channel enhancement mode field effect transistor produced by Alpha & Omega Semiconductor, Ltd. It has excellent RDS(ON), ultra-low low gate charge and a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
The AO4805 is a dual P‑Channel enhancement mode field‑effect transistor that uses advanced trench technology to achieve low on‑resistance and ultra‑low gate charge. It is suitable for use as a load switch or in PWM applications.
The document lists absolute maximum ratings, thermal characteristics, detailed static and dynamic electrical parameters, as well as SO‑8 package dimensions, marking, and tape‑and‑reel handling data.
| Drain‑Source Voltage (Vds) | -30 V |
|---|---|
| Gate‑Source Voltage (Vgs) | +25 V |
| Continuous Drain Current (Id) at 25 °C | -8 A |
| Power Dissipation at 70 °C | 1.44 W |
| Input Capacitance (Ciss) | 2076 pF |
| Total Gate Charge (Qg) | 39 nC |
| On‑Resistance (Rds(on)) at Vgs = –20 V, Id = –8 A | 15 mΩ |
The device is rated for a drain‑source voltage of –30 V.
The gate‑source voltage rating is +25 V.
The AO4805 can conduct a continuous drain current of –8 A at 25 °C.
The transistor is supplied in an SO‑8 surface‑mount package.