The AO4423 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha&Omega Semiconductor, Ltd. It has excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications and it is ESD protected.
The AO4423 is a P‑channel enhancement mode field‑effect transistor featuring advanced trench technology, a -30 V drain‑source breakdown voltage and a +25 V gate rating. It is designed for load‑switch and PWM applications, offers ESD protection of 6000 V HBM, and is supplied in a lead‑free, RoHS‑compliant package.
The document provides absolute maximum ratings, thermal characteristics, static and dynamic electrical parameters, and typical characteristic curves such as on‑resistance versus drain current, gate‑charge, and capacitance. All values are given for a junction temperature of 25 °C unless otherwise noted.
| Drain‑Source Voltage (VDS) | -30 V |
|---|---|
| Gate‑Source Voltage (VGS) | +25 V |
| Continuous Drain Current (ID) | -15 A |
| Pulsed Drain Current | -80 A |
| Power Dissipation | 2 W (at 70 °C) |
| Junction Temperature Range | -55 °C to 150 °C |
| Input Capacitance (Ciss) | 4632 pF |
| Output Capacitance (Coss) | 1034 pF |
| Total Gate Charge (Qg) | 82 nC |
| ESD Rating | 6000 V HBM |
The AO4423 can withstand a drain‑source voltage of up to -30 V.
The device is rated for a gate‑source voltage of +25 V.
Yes, the AO4423 is offered in a lead‑free, RoHS‑compliant package.
The total gate charge is specified as 82 nC.