Austin Semiconductor AS4C4256 883C 256K x 4 DRAM Fast Page Mode Datasheet


Austin Semiconductor AS4C4256 883C 256K x 4 DRAM Fast Page Mode Datasheet - cover page
Brand
ASI
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
11
File format
PDF
File size
7.1 MB
Published
08 May, 2012
Updated
21 June, 2012
MD5 checksum
D5A35C9EAC139B851BF693855458BBB6

About this manual

The AS4C4256 883C is a randomly accessed solid‑state memory containing 1,048,576 bits organized in a 262,144 × 4 configuration. It uses a 20‑pin DIP/LCC package, supports fast page mode for quicker read/write cycles, and features industry‑standard pinout and timing with full TTL compatibility.

The device is qualified for military temperature ranges (‑55 °C to +125 °C) and meets MIL‑STD‑883. Electrical specifications include a 4.5‑5.5 V supply, low standby current, and defined timing parameters such as access times and refresh cycles. Detailed test requirements are listed per MIL‑STD‑883 methods.

What's inside

  • Features
  • General Description
  • Pin Assignment
  • Functional Block Diagram
  • Absolute Maximum Ratings
  • DC Electrical Performance Characteristics
  • Capacitance
  • Electrical Characteristics and Recommended AC Operating Conditions
  • Notes
  • Electrical Test Requirements

Specifications

Supply Voltage (VCC)4.5 V – 5.5 V
Input High Voltage (VIH)2.4 V
Operating Current (Fast Page Mode)70 mA – 50 mA
Refresh Period8 ms (512 cycles)
Fast Page Mode Read/Write Cycle Time45 ns – 65 ns

Frequently asked questions

What is the recommended supply voltage range for the AS4C4256 883C?

The device operates with a supply voltage between 4.5 V and 5.5 V.

What is the refresh period for the DRAM?

The refresh period is 8 ms, covering 512 refresh cycles.

What are the fast page mode read/write cycle times?

Fast page mode read or write cycles are 45 ns to 65 ns.

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