This is a NPN silicon RF power transistor with the model number ASI CBSL30B. The features of this transistor include the Omnigold metallization system, a maximum current of 5.0A, a maximum voltage of 48V, and a maximum power of 43W.
The CBSL30B is an N‑type silicon RF power transistor designed for high‑frequency applications. It features an Omnigold™ metalization system and is offered by Advanced Semiconductor, Inc.
The sheet lists electrical characteristics such as breakdown voltages, current limits, gain, and power dissipation, as well as mechanical dimensions and package style for the device.
| Test Condition Temperature (TC) | 25 °C |
|---|---|
| Base‑Collector Breakdown Voltage (BVCBO) at IC | 50 mA |
| Base‑Emitter Breakdown Voltage (BVCEO) at IC | 20 mA |
| Emitter‑Base Breakdown Voltage (BVEBO) at IE | 5 mA |
| Collector‑Base Voltage (VCB) | 24 V |
| Current Gain (hFE) at VCE = 5.0 V | 100 mA |
| Maximum Power Dissipation (PDISS) | 43 W @ 25 °C |
| Maximum Collector‑Base Voltage (VCBO) | 48 V |
| Maximum Collector‑Emitter Voltage (VCES) | 45 V |
| Maximum Emitter‑Base Voltage (VEBO) | 4.0 V |
| Operating Frequency (f) | 960 MHz |
| Output Power (POUT) | 30 W |
The device can dissipate up to 43 W at a test temperature of 25 °C.
VCBO is 48 V, VCES is 45 V, and VEBO is 4.0 V.
The transistor is rated up to 960 MHz.