This datasheet is about PUB4702 silicon N-channel power F-MOS FET, it has guaranteed avalanche energy capacity, high speed switching, low on-resistance, no secondary breakdown, low voltage drive and built-in zener diodes features. It can be used for contactless relay, solenoid diving circuit, motor driving circuit, control equipment and switching power supply.
This datasheet describes the Panasonic PUB4702 silicon N‑channel power F‑MOS transistor array, intended for use in contactless relays, solenoid driving circuits, motor drivers, control equipment, and switching power supplies. It lists key features such as avalanche‑energy capability, low ON‑resistance, and built‑in zener diodes.
Key electrical parameters are detailed, including a drain‑to‑source breakdown voltage of 35+10 V, a gate‑to‑source voltage rating of +15 V, a continuous drain current of 1 A, and a pulse current capability of 2 A. The device’s on‑resistance is typically 390 mΩ, and its avalanche energy capacity is 25 mJ. Thermal limits and safe operating area curves are also provided.
| Drain to Source breakdown voltage (V_DSS) | 35+10 V |
|---|---|
| Gate to Source voltage rating (V_GSS) | +15 V |
| Continuous drain current (I_D) | 1 A |
| Pulse drain current (I_D, pulse) | 2 A |
| Avalanche energy capacity (E_AS) | 25 mJ |
| On‑resistance (R_DS(on)) | 390 mΩ (typical) |
The maximum drain‑to‑source voltage is 35+10 V.
The typical on‑resistance is about 390 mΩ.
It can handle an avalanche energy of 25 mJ.