The KM681000B family is a 0.6-micron CMOS process technology-based, low-power CMOS static random access memory that supports various operating temperature ranges and has multiple package types for flexible system design. The series also supports low data retention voltage and low standby current for battery back-up operation.
The KM681000B family is a low‑power 128K × 8‑bit CMOS static RAM fabricated by Samsung. It is offered in commercial, extended and industrial temperature ranges and in several JEDEC‑standard packages such as 32‑DIP, 32‑SOP and 32‑TSOP, providing flexibility for system designers.
The document lists absolute maximum ratings, recommended DC operating conditions, timing characteristics, data‑retention behavior, and detailed package dimensions. It also includes ordering information for the various speed‑bin and temperature‑grade part numbers.
| Process Technology | 0.68 µm CMOS |
|---|---|
| Organization | 128K × 8 |
| Power Supply Voltage | 5.0 V ±10 % |
| Access Time | 55 ns (5 ns bin), 70 ns (7 ns bin), 100 ns (10 ns bin) |
| Package Types | 32‑DIP, 32‑SOP, 32‑TSOP |
The low data retention voltage is 2 V (minimum).
The device can dissipate up to 1.0 W.
A typical supply voltage of 5.0 V is recommended, with an allowed range of 4.5 V to 5.5 V.