K4D64163H is 67,108,864 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 1.2GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
The K4D64163HF is a 64‑Mbit DDR SDRAM organized as 1M × 16‑bit × 4 banks. It features bi‑directional data strobe, DLL alignment, auto‑refresh, and SSTL‑2 compatible I/O. The device operates from a 3.3 V core supply and a 2.5 V I/O supply, delivering up to 600 Mbps per pin at 300 MHz clock rates.
The datasheet includes detailed pin‑out for the 66‑pin TSOP‑II package, power‑up and initialization sequences, mode‑register settings, and timing tables for various speed grades (TC33, TC36, TC40, TC50, TC60). Package dimensions and mechanical drawings are also provided.
| Capacity | 64 Mbit |
|---|---|
| Organization | 1M × 16 bit × 4 banks |
| Core supply voltage | 3.3 V ± 5 % |
| I/O supply voltage | 2.5 V ± 5 % |
| Interface type | SSTL‑2 compatible |
| Package | 66‑pin TSOP‑II |
| Maximum clock frequency | 300 MHz (TC33) |
| Refresh period | 64 ms (4K cycles) |
Apply power and keep CKE low, then start the clock, wait at least 200 µs, issue a NOP, raise CKE, pre‑charge all banks, enable the DLL with EMRS, reset the DLL with MRS, and complete the initialization with auto‑refresh and mode‑register set commands.
The core operates from a 3.3 V supply (±5 %) and the I/O interface uses a 2.5 V supply (±5 %).
The device can run up to 300 MHz for the TC33 speed grade, with lower frequencies for other grades.