KM681000E is a low power CMOS static RAM produced by SAMSUNG. It supports various operating temperature ranges and has various packaging types for user flexibility in system design. The family also supports low data retention voltage for battery back-up operation with low data retention current.
The KM681000E family is a 128K×8 low‑power CMOS static RAM fabricated by Samsung using advanced CMOS process technology. It is offered in commercial (0 °C‑70 °C) and industrial (‑40 °C‑85 °C) temperature ranges and supports several package types, including 32‑DIP‑600, 32‑SOP‑525, and 32‑TSOP1‑0820F, providing flexibility for system designers.
The datasheet provides comprehensive electrical characteristics such as supply voltage (4.5‑5.5 V), low data retention voltage (2 V min), input/output voltage thresholds, standby currents, timing parameters for read/write cycles, and data retention specifications. Package dimensions for each form factor are also listed.
| Organization | 128Kx8 |
|---|---|
| Power Supply Voltage | 4.5~5.5 V |
| Low Data Retention Voltage | 2 V (Min) |
| Package Types | 32‑DIP‑600, 32‑SOP‑525, 32‑TSOP1‑0820F |
| Commercial Operating Temperature | 0 °C to 70 °C |
| Industrial Operating Temperature | -40 °C to 85 °C |
| Input High Voltage (VIH) | 2.2 V typical |
| Input Low Voltage (VIL) | -0.59 to 0.8 V |
The device operates from a supply voltage of 4.5 V to 5.5 V.
It is offered in 32‑DIP‑600, 32‑SOP‑525, and 32‑TSOP1‑0820F packages.
The industrial version is rated from –40 °C to 85 °C.
The minimum data retention voltage is 2 V.