K4S161622D-TI/E is a 1Mx16 synchronous high data rate dynamic random access memory produced by Samsung. The product uses Samsung's high-performance CMOS technology, and has 3.3V power supply, LVTTL compatibility, multi-bank operation, MRS cycle, address key programming, burst length, burst type and other features.
This handbook describes the K4S161622D‑TI/E 1M × 16 CMOS SDRAM, including its memory organization, features such as 3.3 V power supply, LVTTL compatibility, dual‑bank operation, and programmable burst lengths. It also lists ordering information, package options, and a functional block diagram.
Technical sections cover pin configuration, absolute maximum ratings, recommended DC operating conditions, capacitance guidelines, AC test parameters, mode‑register set cycles, and package dimensions. The document is intended for designers and engineers who need detailed electrical characteristics and timing diagrams for this SDRAM device.
| Memory organization | 1M × 16 SDRAM |
|---|---|
| Supply voltage (VDD, VDDQ) | 3.0 V min, 3.3 V typ, 3.6 V max |
| Storage temperature range | -55 °C to +150 °C |
| Power dissipation | 1 W |
| Package type | TSOP (II) |
The device operates with a supply voltage VDD/VDDQ of 3.0 V minimum, 3.3 V typical, and 3.6 V maximum.
The SDRAM can be stored from –55 °C up to +150 °C.