This document is a specification sheet for Samsung 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC.
This document provides detailed specifications for Samsung's unbuffered DDR2 SODIMM modules, covering capacities of 256 MB, 512 MB and 1 GB. It includes ordering information, electrical characteristics, pin configurations, functional descriptions, and mechanical dimensions.
Key sections describe supported DDR2 speeds, voltage ranges, timing parameters, package types, and power‑down currents, along with absolute maximum ratings and recommended operating conditions for system designers and technicians.
| Capacities | 256 MB, 512 MB, 1 GB |
|---|---|
| Supported DDR2 Speeds | DDR2‑400, DDR2‑533, DDR2‑667, DDR2‑800 |
| Operating Voltage | 1.0 V ~ 2.3 V (VDD) |
| Power Supply Standard | JEDEC 1.8 V ± 0.1 V |
| Package Types | 60‑ball FBGA (64Mx8) and 84‑ball FBGA (32Mx16) |
| Programmable CAS Latency | 3, 4, 5 |
| Lead‑free Indicator | "Z" in part number denotes lead‑free product |
The "Z" (11th digit) indicates that the part is a lead‑free product.
VDD operates from 1.0 V to 2.3 V relative to VSS.
The modules support DDR2‑400, DDR2‑533, DDR2‑667, and DDR2‑800 data rates.